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IXTV230N085T
IXTV230N085TS
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
PLUS220 (IXTV) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 50 A
R G = 3.3 ? (External)
75
125
9900
1230
286
32
49
56
S
pF
pF
pF
ns
ns
ns
t f
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
39
187
51
55
ns
nC
nC
nC
Terminals:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
R thJC
0.27 ° C/W
R thCS
PLUS220
0.25
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic
Values
(T J = 25 ° C unless otherwise specified)
Min.
Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 50 A, -di/dt = 100 A/ μ s
90
230
520
1.0
A
A
V
ns
PLUS220SMD (IXTV_S) Outline
V R = 25 V, V GS = 0 V
Note 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
7,063,975B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
4,881,106
5,063,307
5,034,796
5,381,025
5,187,117
6,259,123B1
5,486,715
6,534,343
6,306,728B1
6,710,405B2
6,583,505
6,759,692
6,710,463
7,063,975B2
6,771,478B2
7,071,537
7,071,537
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